Name: Wafer Epitassiali 4H-SiC per MOSFET ad Altissima Tensione (100–500 µm, 6 pollici)
Uploaded: 2026-03-09CDT00:47:59-05:00
Duration: 4 s
Description: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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Wafer Epitassiali 4H-SiC per MOSFET ad Altissima Tensione (100–500 µm, 6 pollici)

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September 02, 2025

Parola chiave: Wafer del carburo di silicio

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#substrato del carburo di silicio #sic wafer #silicio sui wafer dello zaffiro

Descrizione video:

Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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